3D like vortex behavior and the thermally activated flux flow mechanism in (Hg0.8Re0.2)Ba2Ca2Cu3Ox superconducting films
Autor: | Z. D. Yakinci, E. Altin |
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Rok vydání: | 2013 |
Předmět: |
Superconductivity
Materials science Condensed matter physics Filling factor Annealing (metallurgy) Activation energy Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Vortex Magnetic field Nuclear magnetic resonance Electrical resistivity and conductivity Electrical and Electronic Engineering |
Zdroj: | Journal of Materials Science: Materials in Electronics. 24:3660-3667 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-013-1300-5 |
Popis: | Approximately 1 μm thick high quality epitaxial c-axis oriented (Hg0.8Re0.2)Ba2Ca2Cu3Ox superconducting films have been prepared on MgO (100) substrates using spraying technique and post-Hg-Vapor annealing. The effect of the heating temperature–time combinations and the filling factor of Hg (ffHg) on the physical, electrical and magnetic properties of the thick films have been investigated. The XRD investigations showed that the a–b plane of HgRe-1223 phase align parallel to the substrate surface. The best T c and T zero were found to be 130.6 and 127.2 K, respectively. The superconducting transition of the films has been measured under applied magnetic field up to 6 T. The results obtained suggested that dissipative resistivity can be explained by thermally activated flux motion below critical temperature under applied magnetic field. The temperature and field dependences of the activation energy in the thermally activated flux flow region have also been investigated. The calculated values of m and α values were found to be 1.42–1.49 and 0.498–0.518 respectively and suggesting a 3D like behavior and the thermally activated flux flow mechanism for all films fabricated. Magnetic properties of the films up to 6 T have also been investigated. The calculated value of critical current density, J c, was found to be 4.7 × 106 A/cm2 at 10 K for the optimally treated films. |
Databáze: | OpenAIRE |
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