Analysis of Process Variations in W-Band GaN MMIC PAs Using Nonparametric Statistics
Autor: | Shane Verploegh, Daniel N. Martin, Laila Marzall, Zoya Popovic, Mauricio Pinto, Gregor Lasser |
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Rok vydání: | 2021 |
Předmět: |
Physics
Radiation business.industry Amplifier 020206 networking & telecommunications Gallium nitride 02 engineering and technology Integrated circuit Condensed Matter Physics law.invention Antenna array chemistry.chemical_compound Optics Horn antenna W band chemistry law 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering business Monolithic microwave integrated circuit Microwave |
Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 69:2304-2318 |
ISSN: | 1557-9670 0018-9480 |
Popis: | This article presents an analysis of the effects of amplifier process-related performance variation on the radiation patterns of a ${W}$ -band active transmit antenna array. Based on measured on-wafer $S$ -parameters for about 80 amplifier chips designed in an experimental 90-nm gallium nitride (GaN) on SiC process, a statistical analysis of the array patterns is performed. Several types of probability density functions (pdfs) are generated from measured data and compared to determine which statistical approach is most relevant. We find that a joint distribution that maintains the correlation structure between $|S_{21}|$ and $\angle S_{21}$ is important for an accurate analysis. The monolithic microwave integrated circuits (MMICs) are connected to the waveguide-fed horn antenna elements in the array via microstrip-to-waveguide transitions fabricated on alumina. The transitions are analyzed in full-wave simulations with fabrication tolerances included in the analysis. Finally, the MMIC and transition statistical variations are cascaded, resulting in a quantitative evaluation of spatial power combining. Given a random choice of power amplifier chips in a $4\times 4$ array, the EIRP is shown to vary by ±3 dB at 94 GHz. |
Databáze: | OpenAIRE |
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