Characteristics of HfO2Thin Films Using Wet Etching
| Autor: | Jeung-Ryoul Yang, Yongjae Choi, Jung-Hun Lim, Noh-Seok Kwak, Taek-Sung Hwang |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
fungi Hydrazine Inorganic chemistry Transistor technology industry and agriculture macromolecular substances law.invention Ion chemistry.chemical_compound stomatognathic system chemistry Etch pit density Chemical engineering law Thermal stability Thin film Selectivity Buffered oxide etch |
| Zdroj: | Journal of the Korean Institute of Electrical and Electronic Material Engineers. 24:687-692 |
| ISSN: | 1226-7945 |
| DOI: | 10.4313/jkem.2011.24.9.687 |
| Popis: | Hafnium oxide () was very advantageous for substitute material of gate on existing transistor. has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of was higher than thermal oxide due to , , and ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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