Moisture diffusion rate in an ultra-low-k dielectric and its effect on the dielectric reliability
| Autor: | M. van Soestbergen, V. Subramanian, R. Braspenning, P. Eggenkamp, E. Olthof, N. Duan |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength Moisture Electrical breakdown Physics::Optics Low-k dielectric Time-dependent gate oxide breakdown 02 engineering and technology Activation energy Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Fick's laws of diffusion Physics::Geophysics Condensed Matter::Materials Science 0103 physical sciences Composite material 0210 nano-technology Physics::Atmospheric and Oceanic Physics |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps46558.2021.9405157 |
| Popis: | Moisture diffusion behavior in an ultra-low-k (ULK) dielectric has been studied using a ring oscillator. The diffusion constant of water in the ULK dielectric was found to be temperature and moisture concentration dependent and can be modeled as an Arrhenius function with an activation energy of 0.27 eV. Furthermore, the impact of moisture on dielectric reliability was investigated by a comb-meander test structure without edge seals. The experimental results showed that moisture could easily be absorbed by an ULK dielectric. The absorbed moisture cannot be completely desorbed with high temperature dry baking. The presence of moisture has significant impact on the dielectric breakdown voltage and the time-dependent dielectric breakdown (TDDB) lifetime. |
| Databáze: | OpenAIRE |
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