A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
| Autor: | Ty McNutt, Andris Ezis, Bettina Nechay, S. Van Campen, Marc Sherwin, Robert S. Howell, Rowland C. Clarke, Christopher F. Kirby, Ranbir Singh, S. Buchoff |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Subthreshold conduction business.industry Electrical engineering Wide-bandgap semiconductor Die (integrated circuit) Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry MOSFET Silicon carbide Optoelectronics Power semiconductor device Commutation Electrical and Electronic Engineering Power MOSFET business |
| Zdroj: | IEEE Transactions on Electron Devices. 55:1807-1815 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2008.928204 |
| Popis: | This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at les200degC. This is achieved by an additional growth (epitaxial regrowth) of a thin epitaxial layer on top of already implanted p-well regions in conjunction with a N20-based gate oxidation process. Additionally, the design space of the DMOSFET structure was explored using analytical and numerical modeling together with experimental verification. The resulting 0.15-cm2 active 0.43-cm2 die DMOSFET with 10-kV breakdown provides IDS = 8 A at a gate field of 3 MV/cm, along with a subthreshold current at VGS = 0 V that decreases from 1 muA (6.7 muA/cm2) at 25degC to 0.4 muA (2.7 muA/cm2) at 200degC. |
| Databáze: | OpenAIRE |
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