Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon

Autor:	Jean-Luc Rouvière, M. Loubradou, Roland Bonnet, F. Fournel, Sami Youssef
Rok vydání:	2009
Předmět:	Dislocation creep Silicon business.industry Close-packing of equal spheres chemistry.chemical_element Geometry Condensed Matter Physics Dark field microscopy Reciprocal lattice Optics chemistry Free surface Twist Dislocation business
Zdroj:	Philosophical Magazine. 89:413-434
ISSN:	1478-6443 1478-6435
DOI:	10.1080/14786430802651521
Popis:	The square dislocation network of a (0 0 1) buried small-angle boundary in silicon was observed by dark-field transmission electron microscopy to examine the structures of more than 100 dissociated dislocation segments. Images were taken with g = (2 2 0), using a many-beam case along the reciprocal lattice row. Dissociation occurs on alternate close-packed planes without systematic rule, although a degree of ordering is taking place. Most of the dislocation segments have lengths equal to half of the square network period. Image simulation studies revealed that their experimental contrasts cannot be explained from the usual assumption of straight dislocations running in an infinite crystal. However, if these dislocations are supposed close and parallel to a nearby free surface, a reasonable agreement is found between the micrographs and the simulated images. A three-dimensional elastic model is proposed to explain the contrasts of the dislocation network.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f8d5dccc99c93d31bd1fc05f413a616 https://doi.org/10.1080/14786430802651521 Zobrazit plný text záznamu