Testing of Configurable 8T SRAMs for In-Memory Computing
Autor: | Jin-Fu Li, Tsai-Ling Tsai, Chi-Tien Sun, Chun-Lung Hsu |
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Rok vydání: | 2020 |
Předmět: |
Hardware_MEMORYSTRUCTURES
business.industry Computer science 020208 electrical & electronic engineering 02 engineering and technology Content-addressable memory Ternary content addressable memory Memory array 020202 computer hardware & architecture Test algorithm In-Memory Processing Embedded system Memory wall 0202 electrical engineering electronic engineering information engineering Static random-access memory business Decoding methods |
Zdroj: | ATS |
DOI: | 10.1109/ats49688.2020.9301535 |
Popis: | In-memory computing (IMC) architecture has been considered as an alternative for overcoming the memory wall of von-Neumann computing architecture. Various IMC memories using 8T static random access memory (SRAM) cell have been reported. Some of them, the memory array can provide SRAM and ternary content addressable memory (TCAM) function. In this paper, a March-like test algorithm is proposed, which requires 10 × 2p Read/Write operations, (2q + 4m) Compare operation, and (2r+1 + 4m) Erase operations to cover simple SRAM faults and TCAM Comparison faults, for an IMC 8T SRAM providing 2p ×w-bit SRAM and m× 2q−1-bit TCAM, where p = q+r and m = 2r ×w. |
Databáze: | OpenAIRE |
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