Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
| Autor: | Sergey A. Blokhin, A. V. Babichev, Innokenty I. Novikov, M. A. Bobrov, A. Yu. Egorov, L. Ya. Karachinsky, N. V. Kryzhanovskaya, S. I. Troshkov, Yu. M. Zadiranov, A. G. Gladyshev, Eduard Moiseev |
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| Rok vydání: | 2017 |
| Předmět: |
Photoluminescence
Materials science Physics::Optics 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science Optics law Dielectric mirror 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Quantum well 010302 applied physics business.industry 020208 electrical & electronic engineering Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Distributed Bragg reflector Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor Optoelectronics business Lasing threshold |
| Zdroj: | Semiconductors. 51:1127-1132 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617090056 |
| Popis: | The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the heterostructure with a GaAs/AlGaAs distributed Bragg reflector and an active region based on InAlGaAs/InGaAs quantum wells is grown by molecular-beam epitaxy on a GaAs (100) substrate. The top dielectric mirror with a SiO2/Ta2O5 distributed Bragg reflector is formed by magnetron sputtering. The spectra of the room-temperature microphotoluminescence of these vertical-cavity surface-emitting laser heterostructures are studied under 532-nm excitation in the power range of 0–70 mW (with a focused-beam diameter of ~1 μm). The superlinear dependence of the photoluminescence intensity on the excitation power, narrowing of the photoluminescence peaks, and a change in the modal composition may be indications of lasing. The results obtained give evidence that the technology of the metamorphic growth of heterostructures on GaAs substrates can be used for the fabrication of vertical-cavity surface-emitting lasers working in the 1300- nm spectral range. |
| Databáze: | OpenAIRE |
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