Random Telegraph Noise Read Instability Characteristics in a Megabit RRAM Array
| Autor: | Wen-Ting Chu, Chun-Yu Wu, Yung-Huei Lee, Chang Chih-Yang, Wen-Hsien Kuo, Wayne Wang, Ta-Chuan Liao |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Physics Random access memory business.industry chemistry.chemical_element 02 engineering and technology Technology development 021001 nanoscience & nanotechnology 01 natural sciences Instability Electronic Optical and Magnetic Materials Resistive random-access memory Hafnium chemistry Megabit 0103 physical sciences Electrode Conductive filament Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters. 39:1644-1647 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2866588 |
| Popis: | Random telegraph noise (RTN) read instability of high-resistance state (HRS) in hafnium–based resistive random access memory (RRAM) is investigated using megabit array statistical analytics. It is found that the RTN read current fluctuation decreases along with the resistance of HRS; this is attributed to the small quantity of perturbation sources in tunnel gap between the conductive filament and the bottom electrode. Our experiment shows that maximum current fluctuation for the HRS tail bit of the megabit array is less than $1~\mu \text{A}$ during 106 successive read operations, and should eliminate the potential RTN-related obstacles for embedded RRAM technology development. |
| Databáze: | OpenAIRE |
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