Local anodic oxidation of solid GeO films: The nanopatterning possibilities
| Autor: | Alexander V. Latyshev, K. N. Astankova, Vladimir A. Volodin, Ivan A. Azarov, E. B. Gorokhov |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Scanning electron microscope Nanowire General Physics and Astronomy Nanotechnology 02 engineering and technology 01 natural sciences Nanoclusters chemistry.chemical_compound symbols.namesake Germanium monoxide 0103 physical sciences 010302 applied physics Germanium dioxide business.industry Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Amorphous solid chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Scanning probe lithography |
| Zdroj: | Surfaces and Interfaces. 6:56-59 |
| ISSN: | 2468-0230 |
| Popis: | Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for oxidation scanning probe lithography. Amorphous GeO films were deposited onto cool Si substrates by thermal evaporation of GeO 2 heterostructure in vacuum. Properties of GeO films were studied by means of IR spectroscopy, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy. The nanopatterning of GeO films included three stages. First, AFM-induced local anodic oxidation of GeO layer was used to obtain GeO 2 nanowires on Si substrate. After local anodic oxidation in high voltage (≥9 V) regime at 80% relative humidity, the cross-section profile of fabricated GeO 2 protrusions contained anomalously high double peaks on a broad base (“two-story shape”). Then, thermal annealing was employed to decompose the GeO film into a GeO 2 matrix and Ge nanoclusters. Third, after selective etching of GeO 2 from the decomposed GeO film, trenches remained in the porous Ge layer instead of GeO 2 nanowires. This may be a potentially useful lithographic approach for fabricating nanoscale structures. |
| Databáze: | OpenAIRE |
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