Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells
| Autor: | Hoon Young Cho, Tae Yeon Seong, Jong Keuk Park, Won Mok Kim, Han Kyu Seo, Jeung Hyun Jeong, Eun A. Ok, Dong Wha Lee |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Deep-level transient spectroscopy Photoluminescence business.industry Diffusion Metals and Alloys Surfaces and Interfaces Electroluminescence Copper indium gallium selenide solar cells Cadmium sulfide Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Impurity Materials Chemistry Optoelectronics business Chemical bath deposition |
| Zdroj: | Thin Solid Films. 546:289-293 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.05.024 |
| Popis: | The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I–V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I–V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I–V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process. |
| Databáze: | OpenAIRE |
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