First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation

Autor:	Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, C. W. Liu
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019532
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6db3274e95163cdaf9bdbc670b0392d4 https://doi.org/10.1109/iedm45625.2022.10019532 Zobrazit plný text záznamu