Autor: |
N. V. Sidorov, M. V. Smirnov, V. B. Pikulev, M. N. Palatnikov |
Rok vydání: |
2020 |
Předmět: |
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Zdroj: |
Transaction Kola Science Centre. 11:168-173 |
ISSN: |
2307-5252 |
DOI: |
10.37614/2307-5252.2020.3.4.036 |
Popis: |
The main contribution to the luminescence of LiNbO3 : Zn (0,04 ÷ 2,01 mol. %) at 420 and 440 nm was established to be due to two electro-hole pairs of Nb4+–O-in niobium octahedron. Moreover, the luminescence weakly depends on Li / Nb ratio and Zn concentration. The increase of Zn concentration to 2,01 mol. % ZnO leads to monotonically increasing intensity in long-wave region of the photoluminescent spectra. This fact indicates that there are shallow energy levels near bottom of the conductivity band. Also the features of hydrogen bonds in LiNbO3structure effects on the location of the shallow energy levels as the complex defects caused by OH-group in the structure can contribute to the photoluminescence. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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