Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications
| Autor: | Mariusz Martyniuk, K. K. M. B. D. Silva, Adrian Keating, Praveen K. Revuri, Lorenzo Faraone, Dhirendra Kumar Tripathi, Gino Putrino |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
Microelectromechanical systems Materials science Silicon Silicon dioxide business.industry technology industry and agriculture chemistry.chemical_element 02 engineering and technology equipment and supplies 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences stomatognathic diseases chemistry.chemical_compound chemistry Optoelectronics Deposition (phase transition) Inductively coupled plasma Thin film 0210 nano-technology business Silicon oxide Layer (electronics) |
| Zdroj: | 2018 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD). |
| Popis: | This paper presents Low temperature (50°C) high deposition rate (1.3nm/sec) inductively coupled plasma chemical vapor deposited silicon and silicon oxide films with uniform thicknesses over large area. It is observed deposition rate of Si thin is influenced by the SiH 4 flow rate and nitrous oxide flow rate for SiOx thin films. The stress in the silicon layer is nominal hence they can be used as the structural or sacrificial layers. Silicon oxide layers showed moderately high stress and they are well suited as sacrificial layers for MEMS application. All layers are deposited at 50 °C hence they are well suited for deposition on flexible polymers which are extensively used in metamaterial, MEMS and microfluidic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|