An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing
| Autor: | Stefan Kubicek, Marc Heyns, Fahd A. Mohiyaddin, Boon Teik Chan, Roy Li, George Simion, Iuliana Radu, Bogdan Govoreanu, Nard Dumoulin Stuyck, J. Jussot |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Transistor chemistry.chemical_element Coulomb blockade 01 natural sciences Noise (electronics) Electronic Optical and Magnetic Materials law.invention chemistry law Logic gate Qubit 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Quantum computer Spin-½ |
| Zdroj: | IEEE Electron Device Letters. 41:1253-1256 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Recent advances demonstrated the feasibility of realizing spin-based quantum computation in Silicon. To make further progress towards a large-scale implementation of spin-based quantum device technologies, a reliable fabrication process with good yield and device uniformity is a crucial requirement. We address this challenge by integrating a prototype spin qubit device in a 300 mm process, using state-of-the-art, CMOS-compatible process steps. We demonstrate well-formed single-electron transistors with a feature size of 50 nm, individual electron controllability and show multi-gate control uniformity from room-down to low-temperature. Dots with charging energies of 1–2 meV and sizes of around 46 nm are estimated, in excellent agreement with design geometry. The noise power spectrum reveals 1/f noise with an amplitude of $2~\mu $ eV at 1 Hz. This successful integration enables further exploration of reproducible Silicon-based spin qubit devices and opens paths for systematic investigation of the performance and scalability of future spin-based qubit devices. |
| Databáze: | OpenAIRE |
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