Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy
| Autor: | O. V. Kucherova, A V Solomonov, V. I. Zubkov, I. N. Yakovlev, E. O. Tsvelev |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Admittance Condensed Matter::Other business.industry General Chemical Engineering Metals and Alloys Heterojunction Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line law.invention Inorganic Chemistry Condensed Matter::Materials Science Admittance spectroscopy Semiconductor law Thermal Materials Chemistry Optoelectronics business Light-emitting diode |
| Zdroj: | Inorganic Materials. 47:1574-1578 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was investigated. The features of the construction of the measuring complex, as well as the technique of measurements of semiconductor nanoheterostructures and processing of admittance spectra, are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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