DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System

Autor:	Dao Dinh Ha, Vladislav Volcheck, Viktor Stempitsky, Tran Tuan Trung
Rok vydání:	2022
Zdroj:	2022 International Conference on Advanced Technologies for Communications (ATC).
DOI:	10.1109/atc55345.2022.9943047
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c391950fc6ecdaa145a4adbc32f0ad5 https://doi.org/10.1109/atc55345.2022.9943047 Zobrazit plný text záznamu