Editors' Choice—Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory
| Autor: | Stephen J. Pearton, Ying Qin, Michael Stavola, Philip Weiser, W. Beall Fowler |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Hydrogen Band gap Oxide Infrared spectroscopy chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical physics Vacancy defect 0103 physical sciences Density functional theory 0210 nano-technology Shallow donor |
| Zdroj: | ECS Journal of Solid State Science and Technology. 8:Q3103-Q3110 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0221907jss |
| Popis: | β-Ga2O3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose properties are generating widespread interest. It has been found that hydrogen can play a key role in the conductivity of Ga2O3 by passivating deep defects and acting as a shallow donor. Recent vibrational spectroscopy experiments have found a dominant hydrogen center with a polarized O-H line at 3437 cm−1. These experiments along with theoretical analysis assign this line to a defect consisting of two equivalent H atoms trapped at a relaxed Ga vacancy. An expansion of this research has involved annealing treatments as well as measurements at different crystal orientations. These results have discovered a reservoir of "hidden" hydrogen in Ga2O3 whose identification involves a variety of hydrogen centers associated with the Ga vacancy, as well as other possible species. |
| Databáze: | OpenAIRE |
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