SU8 photoresist as an etch mask for local deep anodic etching of silicon
| Autor: | Johannes Konle, A.F. Vyatkin, E. Yu. Gavrilin, V. V. Starkov, Hartmut Presting, U. Konig |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Proximity effect (electron beam lithography) chemistry.chemical_element Nanotechnology Photoresist Condensed Matter Physics Porous silicon Electronic Optical and Magnetic Materials Anode chemistry Etching (microfabrication) Optoelectronics Wafer Porosity business |
| Zdroj: | physica status solidi (a). 197:150-157 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.200306491 |
| Popis: | For the formation of an ordered porous structure, the distance between two nearest neighbor pores cannot be more than a certain size, otherwise random nucleated pores arise spontaneously between ordered pores. The “proximity effect” does not allow the production of macropores with variable interpore distances on the surface of Si wafers. More precisely, it does not allow one to increase arbitrarily the distance between single pores, which is necessary, for example, in the manufacture of photovoltaic devices with improved radiation hardness. Moreover, for many electronic, electromechanical, and optical applications, it is highly desirable to pattern porous silicon in defined two- and three-dimensional geometrical layouts. The simplest solution to such problems is anodic etching through a photoresist mask. In the present work, results on deep anodic etching of silicon through a mask of SU8 photoresist are presented. |
| Databáze: | OpenAIRE |
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