The interstitial boron and the boron–germanium complex in silicon–germanium crystals
| Autor: | Nickolay Abrosimov, J. Hattendorf, W. Schröder, W.-D. Zeitz |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Doping chemistry.chemical_element Germanium Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Silicon-germanium Bond length chemistry.chemical_compound Nuclear magnetic resonance Ion implantation chemistry Interstitial compound Electrical and Electronic Engineering Boron |
| Zdroj: | Physica B: Condensed Matter. :535-538 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(01)00768-2 |
| Popis: | The implantation behaviour of boron in silicon–germanium mixed crystals was studied. The β-NMR technique was used to measure electric field gradients at boron nuclei in defects. In addition, full-potential DFT calculations were performed to allow the interpretation on the basis of calculated bond lengths and electronic densities. Two defects were identified: a boron–germanium pair on lattice site in a relaxed silicon environment and a complex with interstitial boron. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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