Backscattering analysis of electron‐beam‐induced diffusion of tin in GaAs from dopant emulsions
| Autor: | A.G. Nassibian, David D. Cohen, Zdzislaw Meglicki |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Materials science
Dopant Physics::Instrumentation and Detectors business.industry Silicon dioxide Doping General Physics and Astronomy chemistry.chemical_element Electron Condensed Matter::Soft Condensed Matter Condensed Matter::Materials Science chemistry.chemical_compound chemistry Emulsion Cathode ray Physics::Accelerator Physics Optoelectronics Diffusion (business) Nuclear Experiment business Tin Nuclear chemistry |
| Zdroj: | Journal of Applied Physics. 62:1778-1781 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | A scanned electron beam was used to diffuse tin in GaAs from doped emulsions. Rutherford backscattering method was used to investigate the results of the diffusion. The diffusion was greatly enhanced by capping the emulsion with evaporated silicon dioxide. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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