Ultra high-speed InP/InGaAs SHBTs with/tand/maxof 185 GHz
| Autor: | Wang Xiantai, Qi Ming, Chang Hu-Dong, Jin Zhi, Xu Anhuai, Zhou Lei, Su Yongbo |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Digital electronics
Ultra high speed Materials science business.industry Oscillation Heterojunction bipolar transistor Electrical engineering Condensed Matter Physics Epitaxy Cutoff frequency Electronic Optical and Magnetic Materials Surface preparation Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Journal of Semiconductors. 31:094007 |
| ISSN: | 1674-4926 |
| DOI: | 10.1088/1674-4926/31/9/094007 |
| Popis: | An InP/InGaAs single heterojunction bipolar transistor (SHBT) with high maximum oscillation frequency (fmax) and high cutoff frequency (ft) is reported. Efforts have been made to maximize fmax and ft simultaneously including optimizing the epitaxial structure, base-collector mesa over-etching and base surface preparation. The measured ft and fmax both reached 185 GHz with an emitter size of 1 × 20 μm2, which is the highest fmax for SHBTs in mainland China. The device is suitable for ultra-high speed digital circuits and low power analog applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|