Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments
| Autor: | Shiou Ying Cheng, Chien Chang Huang, Chi Jhung Lee, Li Yang Chen, Tsung-Han Tsai, Tai You Chen, Yi Jhung Liu, Tzu Pin Chen, Wen-Chau Liu |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Passivation Input offset voltage business.industry Heterostructure-emitter bipolar transistor Heterojunction bipolar transistor Bipolar junction transistor Transistor Heterojunction Condensed Matter Physics law.invention law Optoelectronics General Materials Science Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Superlattices and Microstructures. 46:715-722 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2009.08.012 |
| Popis: | The interesting InGaP/GaAs heterojunction bipolar transistors (HBTs) with different surface passivations on the base surface are fabricated and studied. Experimentally, the HBT device with sulfur treatment passivation displays the lowest offset voltage. However, the device with a 0.02 μm-thick emitter ledge structure reveals better transistor behaviors such as higher current gain and lower base surface recombination current. In addition, it also exhibits improved thermal stability. For the reliability test, the device with a 0.02 μm-thick emitter ledge structure shows the best performance. Therefore, from experimental results, the HBT device performance could be improved by appropriate base surface treatments, e.g., sulfur passivation and emitter ledge structure. |
| Databáze: | OpenAIRE |
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