Effects of ambient conditions on the quality of graphene synthesized by chemical vapor deposition
| Autor: | Fai Tong Si, Si-Rui Zhang, Z. G. Yin, Xiaoli Zhang, Xianghuai Liu, Jingxing Dong, Houqian Gao |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Hydrogen Graphene Inorganic chemistry Graphene foam chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Methane Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry law Monolayer Instrumentation Graphene nanoribbons Graphene oxide paper |
| Zdroj: | Vacuum. 86:1867-1870 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2012.04.035 |
| Popis: | In this work, we investigated the effects of methane concentration and gas flow rate ratio between hydrogen and methane on the quality of graphene synthesized by chemical vapor deposition. It is found that a critical concentration of methane is needed to grow continuous graphene films, while discontinuous graphene flakes are formed at low methane concentrations. Under the condition without hydrogen, a graphene film in which monolayer areas are predominant is grown, whereas a great proportion of hydrogen causes thick graphene, which reduces the transmittance of the film. Our results present an instructive reference to the large-area synthesis of graphene for the potential applications in electronics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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