Atomic and electronic structures of heat treated 6H–SiC surface
| Autor: | Jinliang Wang, Motohiro Iwami, T. Saito, Masaaki Hirai, Masahiko Kusaka, T. Jikimoto, T. Nakata |
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| Rok vydání: | 1998 |
| Předmět: |
Low-energy electron diffraction
Photoemission spectroscopy Chemistry Analytical chemistry General Physics and Astronomy Synchrotron radiation Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Sublimation (phase transition) Graphite Single crystal Surface reconstruction |
| Zdroj: | Applied Surface Science. :593-597 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(98)00121-4 |
| Popis: | We have studied heat-treated (950–1300°C) 6H–SiC(0001)Si and (0001)C face with photoemission spectroscopy using synchrotron radiation (SR-PES) and low energy electron diffraction (LEED). We observed LEED patterns of SiC 1×1, 3 × 3 , 3 × 3 +6 3 ×6 3 and graphite 1×1 sequentially with increasing heating temperature for (0001)Si face and SiC 1×1 for (0001)C face, respectively. We have measured Si(2p) spectra and valence band energy distribution curves (VB-EDCs). The trend of sublimation of Si atoms from surface is different between Si- and C-face. 3 × 3 superstructure must be Si-derived. The 6 3 ×6 3 structure could be explained as a moire pattern caused by monolayer-graphite sitting on SiC surface. Si 3s-derived state of SiC 1×1 is different between SiC 1×1 for Si- and C-face. It is suggested that a single crystal graphite layer grows on Si-face and a polycrystalline graphite is formed on C-face for heated specimens above 1150°C. |
| Databáze: | OpenAIRE |
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