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This report deals with experiments on generation of ultra-high-power short pulses in solid-state switches and describes characteristics of new generators. The first type of device is based on subnanosecond semiconductor opening switches (SOS) acting as the switching element in the final power amplifier. This principle underlies the design of solid-state generators providing a pulse length of 3 to 8 ns, a pulse power of 50 MW to a GW-level, a voltage of 50 kV to 1 MV, and a pulse repetition frequency up to a few kHz. Generators of the second type are based on additional peaking of pulses by means of closing devices utilizing the principle of a delayed ionization shock wave (DBD). In this case a SOS generates an overvoltage across the DBD at a rising rate of about 1014 V/s. As a result, the current is switched to the load via the DBD in less than 1 ns. Generators of the second type provide an output voltage of hundreds of kV with a rise time of less than 1 ns, a peak power of up to 1 GW, a pulse length of 1 to 2 ns, voltage and current rise rates of 500 kV/ns and 10 kA/ns respectively. (4 pages) |
