Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic
| Autor: | J.H. Park, E. S. Jung, Kyu-Charn Park, Yoon-Jong Song, Se-Chung Oh, Hyeongsun Hong, Junha Lee, H. C. Shin, Dongsoo Lee, Sun-Kyu Hwang, D. E. Jeong, K. H. Lee, Byoung-Jae Bae, Y. Ji, Bum-seok Seo, Gwan-Hyeob Koh, Gitae Jeong, Kwan-Heum Lee, Ki-Hyun Hwang, You Kyoung Lee, H. K. Kang, Sung-hee Han, Kwang-Pyuk Suh, S.O. Park, O. I. Kwon |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory business.industry Computer science Process (computing) High density 02 engineering and technology 01 natural sciences Cell resistance 020202 computer hardware & architecture Design for manufacturability Reliability (semiconductor) Stack (abstract data type) Margin (machine learning) Embedded system 0103 physical sciences 0202 electrical engineering electronic engineering information engineering business |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm.2018.8614635 |
| Popis: | We successfully demonstrated the manufacturability of 8Mb STT-MRAM embedded in 28nm FDSOI logic platform by achieving stable functionality and robust package level reliability. Read margin were greatly improved by increasing TMR value and also reducing distribution of cell resistance using advanced MTJ stack and patterning technology. Write margin was also increased by improving the efficiency using novel integration process. Its product reliability was confirmed in package level with passing HTOL 1000 hours tests, 106 endurance test, and retention test. For a wider application, we also demonstrated the feasibility of high density 128Mb STT-MRAM. Based on these results, we clearly verified the product manufacturability of embedded STT-MRAM. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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