Corrigendum to 'Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application' [Thin Solid Films 673 (2019) 112-118]

Autor:	Hyangsook Lee, Seong-Jun Jeong, Yunseok Kim, Mirine Leem, Seongjae Park, Changmin Lee, Seongjun Park, Eunha Lee, Wonsik Ahn, Hyoungsub Kim, Hoijoon Kim, Taejin Park
Rok vydání:	2021
Předmět:	Materials science business.industry Transistor Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Atomic layer deposition law Materials Chemistry Optoelectronics Seeding business
Zdroj:	Thin Solid Films. 721:138544
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2021.138544
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::68d65bdcfb9d23d64d7ad74a925786bf https://doi.org/10.1016/j.tsf.2021.138544 Zobrazit plný text záznamu Full Text from ScienceDirect