During-growth quantitative metrology of epitaxial quantum dots by reflection high energy electron diffraction
| Autor: | Chandani Rajapaksha, A. Freundlich, Manori Gunasekera |
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| Rok vydání: | 2011 |
| Předmět: |
Diffraction
Materials science Reflection high-energy electron diffraction business.industry Context (language use) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Chemical beam epitaxy Condensed Matter::Materials Science Reflection (mathematics) Electron diffraction Quantum dot Optoelectronics business Molecular beam |
| Zdroj: | 2011 37th IEEE Photovoltaic Specialists Conference. |
| Popis: | Within the context of the archetype InAs/GaAs self assembled quantum dot system, we provide an in situ, methodology based on the analysis of reflection high energy electron diffraction (RHEED) patterns and demonstrate its ability for real time and simultaneous determination of the quantum dots facet orientations, average size (height), strain profile, and dot-density during the molecular beam and chemical beam epitaxy growth. |
| Databáze: | OpenAIRE |
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