Urbach energy dependence of the stability in amorphous silicon thin-film transistors

Autor:	Steven C. Deane, R. Brüggemann, Ralf B. Wehrspohn, Ian D. French, M. J. Powell, I. G. Gale
Rok vydání:	1999
Předmět:	Amorphous silicon Materials science Physics and Astronomy (miscellaneous) Silicon Condensed matter physics Hydrogen Diffusion Nanocrystalline silicon chemistry.chemical_element Microstructure Threshold voltage chemistry.chemical_compound chemistry Thin-film transistor
Zdroj:	Applied Physics Letters. 74:3374-3376
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123349
Popis:	We investigate the relationship between the stability of amorphous silicon thin-film transistors (a-Si:H TFTs) and the bulk properties of a-Si:H films. Threshold voltage shifts in a-Si:H TFTs are characterized by the thermalization energy Eth for different times and temperatures and fitted by {1+exp[(Eth−Ea)/kT0]}−2. We find that kT0 exhibits a clear correlation to the Urbach energy, but the more significant parameter Ea seems to depend only on the deposition-induced microstructure and not on the Urbach energy, the hydrogen content, or the hydrogen diffusion coefficient.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6875007a661709f4bbccfdeaeb2d49ca https://doi.org/10.1063/1.123349 Zobrazit plný text záznamu