Design and Simulation of Double Quantum Well Vertical Cavity Tunneling Injection Transistor Laser for Technical Characteristics Improvement
| Autor: | Ghazaleh Noorbakhsh, Hassan Kaatuzian, Behzad Namvar |
|---|---|
| Rok vydání: | 2021 |
| Zdroj: | Frontiers in Optics + Laser Science 2021. |
| Popis: | Here, we proposed a Tunnel-Injection graded-base Transistor Laser with double quantum well. We achieved 50% reduction in threshold current, 13.6GHz optical bandwidth enhancement, 0.9 increment in DC-current gain compared to previous reported results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|