Near Surface Changes Due to 700 keV Si+Irradiation of Titanium Silicon Carbide
| Autor: | Kung Wang, Chaozhuo Z. Liu, Erich H. Kisi, Liqun Q. Shi, D.J. O'Connor, Q. Qi, Bruce V. King |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Scanning electron microscope Analytical chemistry chemistry.chemical_element Rutherford backscattering spectrometry Crystallography symbols.namesake Lattice constant chemistry Phase (matter) Materials Chemistry Ceramics and Composites symbols Radiation damage Irradiation Raman spectroscopy Titanium |
| Zdroj: | Journal of the American Ceramic Society. 98:4050-4057 |
| ISSN: | 0002-7820 |
| DOI: | 10.1111/jace.13793 |
| Popis: | The radiation damage response of Ti3SiC2 heated from 120°C to 850°C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiCx. Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a β phase in addition to the normal α phase of Ti3SiC2. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures. |
| Databáze: | OpenAIRE |
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