Three-dimensional ordering in self-organized (In,Ga)As quantum dot multilayer structures
| Autor: | V. P. Kladko, Gregory J. Salamo, M. V. Slobodian, M. L. Hussein, Yu. I. Mazur, Euclydes Marega, V. V. Strelchuk, Petr M. Lytvyn |
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| Rok vydání: | 2009 |
| Předmět: |
Nanostructure
Condensed matter physics Chemistry Crystal growth Surfaces and Interfaces Crystal structure Triclinic crystal system Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum dot X-ray crystallography Materials Chemistry Electrical and Electronic Engineering Molecular beam epitaxy |
| Zdroj: | physica status solidi (a). 206:1748-1751 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.200881593 |
| Popis: | Molecular beam epitaxy (MBE) grown In 0.5 Ga 0.5 As/GaAs multilayer structures with quantum dots chains (QDs), obtained under different growth conditions, were investigated by high-resolution X-ray diffractometry (HRXRD) and AFM. It was determined that self-organized epitaxial growth of In 0.5 Ga 0.5 As/GaAs can lead to the formation of threedimensional quantum-dot crystals with triclinic (distorted cubic) unit cell. The mechanisms of QD's ordering in dependence on As flux are analyzed. |
| Databáze: | OpenAIRE |
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