High-temperature (up to 773K) operation of 6-kV 4H-SiC junction diodes
| Autor: | Michael E. Levinshtein, John W. Palmour, Valentyn A. Krivutsa, Mrinal K. Das, Pavel Ivanov, Mykola S. Boltovets, Brett Hull |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
business.industry
Diffusion Electrical engineering Activation energy Atmospheric temperature range Condensed Matter Physics Space charge Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Silicon carbide Optoelectronics Junction temperature Transient response Electrical and Electronic Engineering business Diode |
| Zdroj: | Solid-State Electronics. 49:1228-1232 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2005.04.020 |
| Popis: | Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300–773 K. Analysis of the forward current–voltage characteristics and reverse current recovery waveforms shows that the lifetime τ of non-equilibrium carriers steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2 × 10−6 A at T = 773 K and a reverse bias of 300 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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