High field ESR of P-doped Si for Quantum Computing Application

Autor: Takao Mizusaki, Byeongki Kang, Meiro Chiba, Akira Matsubara, Tomohiro Ueno, Myeonghun Song, Soonchil Lee, Minki Jeong, Seitaro Mitsudo, K. Tanaka, K. Sugiyama
Rok vydání: 2009
Předmět:
Zdroj: Journal of Physics: Conference Series. 150:022078
ISSN: 1742-6596
Popis: We measured ESR of phosphorous-doped silicon with a low concentration of P, n, at high magnetic fields and low temperatures to investigate the states of nuclear spin. A sample with n = 6.52 × 1016 /cm3 was studied at 2.85 T (80 GHz) from 30 K to 2.3 K by field-modulating cw-ESR for a fixed 0 dB power. As the temperature was lowered, the out-of-phase signal appeared around 18 K, reached at a maximum intensity at 13 K, and disappeared around 6 K. The out-of-phase signal is referred to the field modulation. The in-phase signal started to change from the derivative of absorption spectrum at high temperatures to absorption-like shape around 15 K and asymmetry of intensity for two peaks of hyperfine-separated signals increased as temperatures was lowered. Below 10 K, the saturation of the in-phase signal started to appear. We speculate that the asymmetry is caused by saturation effect and dynamic nuclear polarization of 31P nuclear spin due to drastic change of electron T1.
Databáze: OpenAIRE