Recent advances in silicon etching for MEMS using the ASE™ process
| Autor: | I. Johnston, J. N. Shepherd, Huma Ashraf, Jyoti Kiron Bhardwaj, Alan Michael Hynes, Janet Hopkins |
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| Rok vydání: | 1999 |
| Předmět: |
Microelectromechanical systems
Plasma etching Materials science Silicon business.industry Metals and Alloys Process (computing) chemistry.chemical_element Nanotechnology Photoresist Condensed Matter Physics Engraving Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry visual_art visual_art.visual_art_medium Optoelectronics Wafer Electrical and Electronic Engineering business Instrumentation Silicon etching |
| Zdroj: | Sensors and Actuators A: Physical. 74:13-17 |
| ISSN: | 0924-4247 |
| Popis: | In the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, ASE™, process satisfies the demanding requirements of the industry. Typically, highly anisotropic, high aspect ratios profiles with fine CD control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 7 μm/min are achievable. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASE™ process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper. |
| Databáze: | OpenAIRE |
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