Silicon light emissions from boron implant-induced defect engineering
| Autor: | L.P. Ren, K.L. Wang, R.P. Ostroumov, G.Z. Pan, Y.G. Lian |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Ion implantation chemistry law Transmission electron microscopy Materials Chemistry Ceramics and Composites Optoelectronics Light emission business p–n junction Light-emitting diode |
| Zdroj: | Journal of Non-Crystalline Solids. 352:2506-2509 |
| ISSN: | 0022-3093 |
| Popis: | We studied the electroluminescence of boron-implanted p–n junction silicon light emitting-diodes (Si LEDs) engineered with the implant-induced extended defects of different types. By varying the post implant annealing conditions to tune the extended defects and by using plan-view transmission electron microscopy to identify them, we found that {1 1 3} defects along Si〈1 1 0〉 are the ones that result in strong silicon light emission of the p–n junction Si LEDs other than {1 1 1} perfect prismatic and {1 1 1} faulted Frank dislocation loops. The electroluminescence peak intensity at about 1.1 eV of {1 1 3} defect-engineered Si LEDs is about twenty-five times higher than that of dislocation defect-engineered Si LEDs. |
| Databáze: | OpenAIRE |
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