Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors

Autor:	Seiya Kasai, Hideki Hasegawa, Hiroshi Okada, Jin Nakamura, Masanobu Iwaya
Rok vydání:	2000
Předmět:	Materials science Fabrication Quantum wire Transistor General Engineering General Physics and Astronomy Schottky diode Nanotechnology Isotropic etching law.invention Quantization (physics) Nanolithography law Nanodevice
Zdroj:	Japanese Journal of Applied Physics. 39:4651
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.39.4651
Popis:	Chemical and electrochemical nanofabrication processes used for fabricating GaAs-based single and coupled quantum wire transistors (QWTrs) utilizing Schottky in-plane gate (IPG) structures are described. IPG and metal dot formation processes using a wet chemical etching and an in situ electrochemical process were optimized for a novel nanodevice fabrication. Fabricated single and coupled QWTrs showed conductance quantization and oscillation characteristics at low temperatures, demonstrating the tight gate control capability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6580aa07bae9b1edb8d4420fb5b2f82b https://doi.org/10.1143/jjap.39.4651 Zobrazit plný text záznamu