Beryllium δ doping of GaAs grown by molecular beam epitaxy

Autor:	N. J. Sauer, J. M. Kuo, Erdmann Frederick Schubert, H. S. Luftman, L. C. Hopkins, Rose Kopf
Rok vydání:	1990
Předmět:	Secondary ion mass spectrometry Condensed Matter::Materials Science Lattice constant Dopant Chemistry Doping Analytical chemistry General Physics and Astronomy Crystal growth Diffusion (business) Epitaxy Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 67:1969-1979
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.345576
Popis:	Spatial localization of Be in δ‐doped GaAs within few lattice constants (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6576b6672e7a9328485cf3d56eb428db https://doi.org/10.1063/1.345576 Zobrazit plný text záznamu