A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer

Autor:	Y.A. Chang, Hung Wen Huang, Shing-Chung Wang, Chih-Chiang Kao, Hao-Chung Kuo, L. H. Laih
Rok vydání:	2006
Předmět:	Thermal oxidation Threshold current Materials science business.industry Aperture Oxide Condensed Matter Physics Vertical-cavity surface-emitting laser chemistry.chemical_compound chemistry Optoelectronics General Materials Science Life test business Layer (electronics) Implanted device
Zdroj:	Materials Chemistry and Physics. 97:10-13
ISSN:	0254-0584
DOI:	10.1016/j.matchemphys.2005.05.046
Popis:	We report the utilization of an selective As + -implanted underlying layer and regrowth method to enhance and control the wet thermal oxidation rate for 850 nm oxide-confined VCSEL. The oxidation rate of the As + -implanted device showed a four-fold increase over the non-implanted one at the As + dosage of 1 × 10 16 cm −3 and the oxidation temperature of 400 °C. The 50 side-by-side As + -implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of Δ I th ∼ 0.2 mA and slope-efficiency of ΔS.E. ∼ 3%. Finally, we accumulated life test data for oxide-confined VCSELs with As + -implanted underlying layer up to 1000 h at 80 o C/15 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64f1fe9f2d401e84e931e4e00ece4585 https://doi.org/10.1016/j.matchemphys.2005.05.046 Zobrazit plný text záznamu Full Text from ScienceDirect