Reduction of threshold voltage deviation in Damascene metal gate MOSFETs

Autor:	A. Yagishita, T. Saito, K. Nakajima, S. Inumiya, K. Matsuo, Y. Akasaka, Y. Ozawa, H. Yano, G. Minamibaba, Y. Matsui, Y. Tsunashima, K. Suguro, T. Arikado, K. Okumura
Rok vydání:	2003
Předmět:	Materials science Negative-bias temperature instability business.industry Transistor Electrical engineering Copper interconnect Time-dependent gate oxide breakdown law.invention Threshold voltage law Gate oxide MOSFET Optoelectronics business Metal gate
Zdroj:	International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
DOI:	10.1109/iedm.1999.823892
Popis:	The Damascene metal gate transistors are found to exhibit characteristics superior to those of the conventional polysilicon gate transistors with respect to the threshold voltage deviation (/spl Delta/V/sub th/) and the subthreshold swing (S-factor) when the metal gate work function deviation (crystal orientation deviation) is suppressed by using the inorganic CVD technique. The mechanisms of the gate length dependence of /spl Delta/V/sub th/ and S-factor in the Damascene metal gate transistors can be explained by metal gate work function deviation in the channel region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64b62690f9432c58353d9d4a9621e781 https://doi.org/10.1109/iedm.1999.823892 Zobrazit plný text záznamu