A straightforward method to determine the parasitic gate resistance of GaN FET

Autor:	Juan Luis del Valle-Padilla, J. A. Reynoso-Hernandez, José Raúl Loo-Yau, J. E. Zuniga-Juarez
Rok vydání:	2009
Předmět:	Materials science business.industry chemistry.chemical_element Schottky diode Gallium nitride Capacitance Inductance chemistry.chemical_compound chemistry Parasitic capacitance Logic gate Parasitic element Optoelectronics business Roentgenium
Zdroj:	2009 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.2009.5165837
Popis:	In this paper a straightforward method to determine the parasitic gate resistance (R g ) of GaN FET is introduced. The method uses a simple linear regression to directly determine the value of R g without prior knowledge of the Schottky diode resistance R 0 and capacitance C 0 . Furthermore, the method requires only a single bias point with low DC current at the gate. In addition to this straightforward method, a reliable procedure for extracting the parasitic source inductance L S is also introduced. This procedure for extracting the source inductance is useful for GaN FET when the imaginary part of Z 12 is negative. The new method has been used successfully in the parasitic element characterization of power AlGaN/GaN HFETs.
Databáze:	OpenAIRE
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