Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
| Autor: | Murugapandiyan Panneerselvam, Elamurugan Raju, Baskaran Subramanian, Subash Navaneethan Vivekanandhan, Mohanbabu Anandan, Yogesh Kumar Verma, Praveen Pechimuthu, Mohammed Wasim, Saminathan Veerappan, Saravana Kumar Radhakrishnan |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Schottky barrier Transistor Schottky diode 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Electrical resistivity and conductivity Power electronics 0103 physical sciences Materials Chemistry Optoelectronics Power semiconductor device Electrical and Electronic Engineering 0210 nano-technology business Diode |
| Zdroj: | Journal of Electronic Materials. 49:4091-4099 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1−xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped P+ GaN cap layer under the gate. The boron-doped GaN cap layer shows great potential to form a high-bandgap Schottky gate in DH-HEMT devices to increase the resistivity of the GaN cap with excellent structural characteristics. Thus, the polarization-induced field in the GaN cap layer can be used to raise the conductive band of the device in the normally OFF operation. In this paper, these AlGaN/GaN power-switching devices with freewheeling Schottky barrier diodes are examined in their working states. In comparison with conventional HEMT power devices, the HEMT with a B-doped GaN cap offers the lowest switching charges, area-specific ON-state resistance, and energy losses. Therefore, this study clearly shows the advantage of GaN transistors for power electronics applications. |
| Databáze: | OpenAIRE |
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