Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

Autor: J. Maege, Günther Tränkle, G. Beister, G. Erbert
Rok vydání: 1998
Předmět:
Zdroj: Solid-State Electronics. 42:1939-1945
ISSN: 0038-1101
DOI: 10.1016/s0038-1101(98)00178-6
Popis: We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs (λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of Inr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.
Databáze: OpenAIRE