Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
Autor: | J. Maege, Günther Tränkle, G. Beister, G. Erbert |
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Rok vydání: | 1998 |
Předmět: |
Facet (geometry)
Materials science Passivation business.industry Relaxation (NMR) Electroluminescence Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention law Materials Chemistry Radiative transfer Degradation (geology) Optoelectronics Electrical and Electronic Engineering business Diode |
Zdroj: | Solid-State Electronics. 42:1939-1945 |
ISSN: | 0038-1101 |
DOI: | 10.1016/s0038-1101(98)00178-6 |
Popis: | We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs (λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of Inr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively. |
Databáze: | OpenAIRE |
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