Active Oxidation of SiC-Based Ceramics in Ar-2% Cl2-O2 Gas Mixtures at 1000oC

Autor:	Dong S. Park, Michael J. McNallan, Sik Y. Ip
Rok vydání:	1992
Předmět:	Materials science Silicon Mineralogy Sintering chemistry.chemical_element Oxygen Corrosion chemistry.chemical_compound chemistry Chemical engineering visual_art Phase (matter) Oxidizing agent Materials Chemistry Ceramics and Composites Silicon carbide visual_art.visual_art_medium Ceramic
Zdroj:	Journal of the American Ceramic Society. 75:1942-1948
ISSN:	1551-2916 0002-7820
DOI:	10.1111/j.1151-2916.1992.tb07221.x
Popis:	The corrosion in Ar–2% CI2 gas mixtures of four low-cost SiC-based materials suitable for use in high-temperature heat exchangers has been invesigated. The oxygen potential was controlled by addition of O2 or H2 at 1000°C. Little attack was observed in the reducing environment composed of Ar–2% Cl2–1% H2 or the oxidizing environment composed of Ar–2% Cl2–20% O2 but all of the materials were subject to active corrosion at intermediate oxygen potentials. Selective attack of the free silicon phase was obsrved for the siliconized silicon carbide materials. The severity of the active oxidation and the oxygen potentital at which the corrosion changed from active to passive were affected by the nature of the sintering aids used in the materials
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::614320ff4e0dd3f7e88ba9f2564f5198 https://doi.org/10.1111/j.1151-2916.1992.tb07221.x Zobrazit plný text záznamu Plný text