The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases
| Autor: | Andreas Waag, Johannes Ledig, Martin Dr. Straßburg, Xue Wang, Hergo-H. Wehmann, Uwe Jahn, Martin Mandl |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Hydrogen business.industry Doping chemistry.chemical_element Nanotechnology Condensed Matter Physics Epitaxy Silane Catalysis Inorganic Chemistry chemistry.chemical_compound Semiconductor Chemical engineering chemistry Phase (matter) Materials Chemistry Metalorganic vapour phase epitaxy business |
| Zdroj: | Journal of Crystal Growth. 384:61-65 |
| ISSN: | 0022-0248 |
| Popis: | Columnar structures of III–V semiconductors recently attract considerable attention because of their potential applications in novel optoelectronic and electronic devices. In the present study, the mechanisms for the growth of catalyst-free self-organized GaN columns on sapphire substrate by metal organic vapor phase epitaxy have been thoroughly investigated. The growth behaviours are strongly affected by the choice of carrier gas. If pure nitrogen is used, Ga droplets are able to accumulate on the top of columns during growth, and they are converted into a high quality GaN layer during the cool down phase due to nitridation. Hydrogen as the carrier gas can improve the optical quality of the overall GaN columns substantially, and in addition increase the vertical growth rate. In this case, no indication of Ga droplets could be detected. Furthermore, silane doping during the growth promotes the vertical growth in both cases either pure nitrogen or pure hydrogen as the carrier gas. |
| Databáze: | OpenAIRE |
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