Wafer-Scale Graphene on 4-Inch SiC
| Autor: | Xiaobo Hu, Wan Cheng Yu, Xian Gang Xu, Xiu Fang Chen |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Scale (ratio) Atmospheric pressure business.industry Graphene Mechanical Engineering Electrostatic force microscope Nanotechnology Condensed Matter Physics law.invention symbols.namesake Mechanics of Materials law symbols Optoelectronics General Materials Science Wafer business Raman spectroscopy Layer (electronics) Graphene nanoribbons |
| Zdroj: | Materials Science Forum. 858:1133-1136 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.1133 |
| Popis: | Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a conventional physical vapor transport (PVT) growth system. Atmospheric pressure graphitization and a “face-down” orientation were account for the high uniformity of graphene. Atomic force microscopy, electrostatic force microscopy and Raman spectroscopy were used to confirm the uniformity of surface morphology and layer number. Electrical properties were also characterized by Hall measurements on 15×15mm2 samples sawed from the wafer. An average Hall mobility of about 2000cm2/Vs was obtained. |
| Databáze: | OpenAIRE |
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