Polytypism in SiC: Theory and experiment

Autor: Yu. M. Tairov, A. V. Lebedev
Rok vydání: 2014
Předmět:
Zdroj: Journal of Crystal Growth. 401:392-396
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2014.01.021
Popis: Theoretical and experimental studies of the phenomenon of polytypism in silicon carbide obtained by the Lely method have been presented. It is shown that the elementary theory of polytypism can be built on the basis of very general considerations, taking into account the physical and chemical parameters of the growth process, as well as the steric factor and the possible symmetry of elementary clusters involved in the growth process.
Databáze: OpenAIRE