Polytypism in SiC: Theory and experiment
Autor: | Yu. M. Tairov, A. V. Lebedev |
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Rok vydání: | 2014 |
Předmět: |
Materials science
Basis (linear algebra) Condensed matter physics Condensed Matter Physics Symmetry (physics) Inorganic Chemistry Lely method Condensed Matter::Materials Science chemistry.chemical_compound Crystallography chemistry Scientific method Steric factor Materials Chemistry Silicon carbide Computer Science::Programming Languages Elementary theory |
Zdroj: | Journal of Crystal Growth. 401:392-396 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2014.01.021 |
Popis: | Theoretical and experimental studies of the phenomenon of polytypism in silicon carbide obtained by the Lely method have been presented. It is shown that the elementary theory of polytypism can be built on the basis of very general considerations, taking into account the physical and chemical parameters of the growth process, as well as the steric factor and the possible symmetry of elementary clusters involved in the growth process. |
Databáze: | OpenAIRE |
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