Contribution to ion implantation through a narrow slit at higher energies

Autor:	A.G.K. Lutsch, H. Runge
Rok vydání:	1983
Předmět:	Range (particle radiation) Ion implantation Materials science chemistry Silicon General Engineering chemistry.chemical_element Slit width Atomic physics Boron Slit Ion
Zdroj:	Microelectronics Journal. 14:15-20
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(83)80165-7
Popis:	For the implantation of boron into silicon through submicrometre-width slits (of the order of 0.5 μm) at an energy of 1 MeV, the maximum ion concentration at a distance equal to the projected range does not reach, even at the centre, the corresponding value for larger windows. Even at lower energies the mask edges have an influence on the ion concentration if the slit width is of the order of 10 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f9f37d9829159aed29bf7abc66d0560 https://doi.org/10.1016/s0026-2692(83)80165-7 Zobrazit plný text záznamu