| Autor: |
Thomas Mikolajick, Halid Mulaosmanovic, Viktor Havel, Stefan Duenkel, Michael J. Hoffmann, Stefan Slesazeck, Benjamin Max, Evelyn T. Breyer |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 IEEE 11th International Memory Workshop (IMW). |
| DOI: |
10.1109/imw.2019.8739742 |
| Popis: |
The polarization reversal in ferroelectric HfO 2 is adopted to store information in three distinct device classes – ferroelectric field effect transistors (FeFET), ferroelectric capacitors (FeCAP) and ferroelectric tunnel junctions (FTJ). Common to all three concepts is the adoption of a ferroelectric layer stack that acts either as gate dielectric in the FeFET or as the capacitor dielectric and tunneling barrier in the FeCAP or FTJ, respectively. A composite structure including an inevitably or purposefully formed dielectric layer is frequently adopted. In this work we report on the co-existence of all three memory concepts within one device structure and propose a 2T1C ferroelectric memory cell that allows the operation and comparative characterization of the trinity of ferroelectric memory devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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